Tehnička dokumentacija
Tehnički podaci
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
ITO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10mm
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Height
15mm
Minimum Operating Temperature
-55 °C
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
1000
P.O.A.
1000
Tehnička dokumentacija
Tehnički podaci
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
ITO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10mm
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Height
15mm
Minimum Operating Temperature
-55 °C