Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Series
IRF7343PbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4mm
Length
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm
RSD 640
RSD 64,011 komad (isporučivo u Reel) (bez PDV-a)
RSD 768
RSD 76,813 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
RSD 640
RSD 64,011 komad (isporučivo u Reel) (bez PDV-a)
RSD 768
RSD 76,813 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
10
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Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Series
IRF7343PbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4mm
Length
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm