Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
450 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
204 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
20.15mm
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
RSD 86.337
RSD 2.877,887 komad (u Tubi od 30) (bez PDV-a)
RSD 103.604
RSD 3.453,464 komad (u Tubi od 30) (s PDV-om)
30
RSD 86.337
RSD 2.877,887 komad (u Tubi od 30) (bez PDV-a)
RSD 103.604
RSD 3.453,464 komad (u Tubi od 30) (s PDV-om)
30
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Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
450 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
204 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
20.15mm
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.