Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Maximum Operating Temperature
+150 °C
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Height
4.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
KM 169,18
KM 3,384 Each (Supplied as a Tape) (bez PDV-a)
KM 197,94
KM 3,959 Each (Supplied as a Tape) (s PDV-om)
Proizvodno pakovanje (traka)
50
KM 169,18
KM 3,384 Each (Supplied as a Tape) (bez PDV-a)
KM 197,94
KM 3,959 Each (Supplied as a Tape) (s PDV-om)
Proizvodno pakovanje (traka)
50
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po traka |
---|---|---|
50 - 95 | KM 3,384 | KM 16,92 |
100 - 245 | KM 2,777 | KM 13,89 |
250+ | KM 2,719 | KM 13,59 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Maximum Operating Temperature
+150 °C
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Height
4.01mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu