Infineon OptiMOS™ N-Channel MOSFET, 46 A, 60 V, 8-Pin TDSON BSC097N06NSATMA1

RS kataloški broj:: 110-9115robna marka: InfineonProizvođački broj:: BSC097N06NSATMA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

5.35mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.1mm

Detalji o proizvodu

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 40,58

KM 1,623 Each (In a Pack of 25) (bez PDV-a)

KM 47,48

KM 1,899 Each (In a Pack of 25) (s PDV-om)

Infineon OptiMOS™ N-Channel MOSFET, 46 A, 60 V, 8-Pin TDSON BSC097N06NSATMA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 25.

Proizvodnja -

Dostupno u više komada 25.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

25

Dostupno u više komada 25
25KM 40,58
50KM 81,17
75KM 121,75
100KM 162,33
125KM 202,91
150KM 243,50
175KM 284,08
200KM 324,66
225KM 365,25
250KM 405,83
275KM 446,41
300KM 486,99
325KM 527,58
350KM 568,16
375KM 608,74

KM 40,58

KM 1,623 Each (In a Pack of 25) (bez PDV-a)

KM 47,48

KM 1,899 Each (In a Pack of 25) (s PDV-om)

Infineon OptiMOS™ N-Channel MOSFET, 46 A, 60 V, 8-Pin TDSON BSC097N06NSATMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 25.

Proizvodnja -

Dostupno u više komada 25.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

25

Dostupno u više komada 25
25KM 40,58
50KM 81,17
75KM 121,75
100KM 162,33
125KM 202,91
150KM 243,50
175KM 284,08
200KM 324,66
225KM 365,25
250KM 405,83
275KM 446,41
300KM 486,99
325KM 527,58
350KM 568,16
375KM 608,74

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

5.35mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.1mm

Detalji o proizvodu

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više