Infineon SIPMOS® P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 BSP322PH6327XTSA1

RS kataloški broj:: 826-9279Pbrend: InfineonProizvođački broj:: BSP322PH6327XTSA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

12.4 nC @ 10 V

Height

1.6mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 8.491

RSD 84,913 komad (isporučivo u Reel) (bez PDV-a)

RSD 10.190

RSD 101,896 komad (isporučivo u Reel) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 BSP322PH6327XTSA1
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 50.

Proizvodnja -

Dostupno u više komada 50.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

100

Dostupno u više komada 50
100RSD 8.491
150RSD 12.737
200RSD 16.983
250RSD 20.902
300RSD 25.082
350RSD 29.262
400RSD 33.443
450RSD 37.623
500RSD 40.497
550RSD 44.547
600RSD 48.596
650RSD 52.646
700RSD 56.696
750RSD 60.745
800RSD 64.795

RSD 8.491

RSD 84,913 komad (isporučivo u Reel) (bez PDV-a)

RSD 10.190

RSD 101,896 komad (isporučivo u Reel) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 BSP322PH6327XTSA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 50.

Proizvodnja -

Dostupno u više komada 50.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

100

Dostupno u više komada 50
100RSD 8.491
150RSD 12.737
200RSD 16.983
250RSD 20.902
300RSD 25.082
350RSD 29.262
400RSD 33.443
450RSD 37.623
500RSD 40.497
550RSD 44.547
600RSD 48.596
650RSD 52.646
700RSD 56.696
750RSD 60.745
800RSD 64.795

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo kolut
100 - 200RSD 84,913RSD 4.246
250 - 450RSD 83,606RSD 4.180
500 - 1200RSD 80,994RSD 4.050
1250+RSD 77,075RSD 3.854

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

12.4 nC @ 10 V

Height

1.6mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više