Infineon OptiMOS P P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 BSS308PEH6327XTSA1

RS kataloški broj:: 823-5500Probna marka: InfineonProizvođački broj:: BSS308PEH6327XTSA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS P

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

2.9mm

Typical Gate Charge @ Vgs

5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

1.3mm

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 136,91

KM 0,548 Each (Supplied on a Reel) (bez PDV-a)

KM 160,18

KM 0,641 Each (Supplied on a Reel) (s PDV-om)

Infineon OptiMOS P P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 BSS308PEH6327XTSA1
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 50.

Proizvodnja -

Dostupno u više komada 50.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

250

Dostupno u više komada 50
250KM 136,91
300KM 164,29
350KM 191,67
400KM 219,05
450KM 246,43
500KM 264,03
550KM 290,44
600KM 316,84
650KM 343,24
700KM 369,65
750KM 396,05
800KM 422,45
850KM 448,86
900KM 475,26
950KM 501,66

KM 136,91

KM 0,548 Each (Supplied on a Reel) (bez PDV-a)

KM 160,18

KM 0,641 Each (Supplied on a Reel) (s PDV-om)

Infineon OptiMOS P P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 BSS308PEH6327XTSA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 50.

Proizvodnja -

Dostupno u više komada 50.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

250

Dostupno u više komada 50
250KM 136,91
300KM 164,29
350KM 191,67
400KM 219,05
450KM 246,43
500KM 264,03
550KM 290,44
600KM 316,84
650KM 343,24
700KM 369,65
750KM 396,05
800KM 422,45
850KM 448,86
900KM 475,26
950KM 501,66

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

količinaJedinična cijenaPo kolut
250 - 450KM 0,548KM 27,38
500 - 2450KM 0,528KM 26,40
2500+KM 0,313KM 15,65

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS P

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

2.9mm

Typical Gate Charge @ Vgs

5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

1.3mm

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više