Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
15 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
217 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
875pF
Maximum Operating Temperature
+175 °C
Energy Rating
2.5mJ
Detalji o proizvodu
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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RSD 14.370
RSD 718,492 komad (isporucivo u Tubi) (bez PDV-a)
RSD 17.244
RSD 862,19 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
20
RSD 14.370
RSD 718,492 komad (isporucivo u Tubi) (bez PDV-a)
RSD 17.244
RSD 862,19 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
20
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
| količina | Jedinična cena | Po cev |
|---|---|---|
| 20 - 96 | RSD 718,492 | RSD 2.874 |
| 100 - 196 | RSD 711,96 | RSD 2.848 |
| 200+ | RSD 692,365 | RSD 2.769 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
15 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
217 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
875pF
Maximum Operating Temperature
+175 °C
Energy Rating
2.5mJ
Detalji o proizvodu
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda