Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C6
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
176 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
21.1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
RSD 3.423
RSD 855,659 komadno (u pakovanju od 4) (bez PDV-a)
RSD 4.107
RSD 1.026,791 komadno (u pakovanju od 4) (s PDV-om)
Standard
4
RSD 3.423
RSD 855,659 komadno (u pakovanju od 4) (bez PDV-a)
RSD 4.107
RSD 1.026,791 komadno (u pakovanju od 4) (s PDV-om)
Standard
4
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
4 - 16 | RSD 855,659 | RSD 3.423 |
20 - 96 | RSD 736,781 | RSD 2.947 |
100 - 196 | RSD 664,932 | RSD 2.660 |
200 - 496 | RSD 659,706 | RSD 2.639 |
500+ | RSD 611,371 | RSD 2.445 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C6
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
176 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
21.1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.