Infineon CoolMOS™ P6 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IPW60R190P6FKSA1

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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P6

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

16.13mm

Width

5.21mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Forward Diode Voltage

0.9V

Height

21.1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 3.063

RSD 612,678 komadno (u pakovanju od 5) (bez PDV-a)

RSD 3.676

RSD 735,214 komadno (u pakovanju od 5) (s PDV-om)

Infineon CoolMOS™ P6 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IPW60R190P6FKSA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5RSD 3.063
10RSD 6.127
15RSD 9.190
20RSD 12.254
25RSD 12.410
30RSD 14.892
35RSD 17.374
40RSD 19.857
45RSD 22.339
50RSD 23.972
55RSD 26.369
60RSD 28.766
65RSD 31.163
70RSD 33.560
75RSD 35.957

RSD 3.063

RSD 612,678 komadno (u pakovanju od 5) (bez PDV-a)

RSD 3.676

RSD 735,214 komadno (u pakovanju od 5) (s PDV-om)

Infineon CoolMOS™ P6 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IPW60R190P6FKSA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5RSD 3.063
10RSD 6.127
15RSD 9.190
20RSD 12.254
25RSD 12.410
30RSD 14.892
35RSD 17.374
40RSD 19.857
45RSD 22.339
50RSD 23.972
55RSD 26.369
60RSD 28.766
65RSD 31.163
70RSD 33.560
75RSD 35.957

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo pakovanje
5 - 20RSD 612,678RSD 3.063
25 - 45RSD 496,413RSD 2.482
50 - 120RSD 479,43RSD 2.397
125 - 245RSD 465,06RSD 2.325
250+RSD 448,078RSD 2.240

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P6

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

16.13mm

Width

5.21mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Forward Diode Voltage

0.9V

Height

21.1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više