Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
60 V
Package Type
DirectFET ISOMETRIC
Series
DirectFET, HEXFET
Mounting Type
Surface Mount
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
89 W
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.35mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.05mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.3V
Height
0.5mm
Zemlja podrijetla
China
Detalji o proizvodu
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 6.048,00
€ 1,26 komadno (u namotaju od 4800) (bez PDV-a)
€ 7.076,16
€ 1,474 komadno (u namotaju od 4800) (s PDV-om)
4800
€ 6.048,00
€ 1,26 komadno (u namotaju od 4800) (bez PDV-a)
€ 7.076,16
€ 1,474 komadno (u namotaju od 4800) (s PDV-om)
4800
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Provjerite ponovno kasnije.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
60 V
Package Type
DirectFET ISOMETRIC
Series
DirectFET, HEXFET
Mounting Type
Surface Mount
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
89 W
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.35mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.05mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.3V
Height
0.5mm
Zemlja podrijetla
China
Detalji o proizvodu
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda