Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 5.4 A, 100 V, 8-Pin SO-8 IRF7490TRPBF

Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.039 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
KM 3.989,83
KM 0,997 Each (On a Reel of 4000) (bez PDV-a)
KM 4.668,10
KM 1,167 Each (On a Reel of 4000) (s PDV-om)
4000
KM 3.989,83
KM 0,997 Each (On a Reel of 4000) (bez PDV-a)
KM 4.668,10
KM 1,167 Each (On a Reel of 4000) (s PDV-om)
4000
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Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.039 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2