Infineon HEXFET N-Channel MOSFET, 170 A, 80 V, 3-Pin TO-247AC IRFP2907ZPBF

RS kataloški broj:: 688-6976Pbrend: InfineonProizvođački broj:: IRFP2907ZPBF
brand-logo
Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

80 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

310 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.9mm

Maximum Operating Temperature

+175 °C

Height

20.3mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
Informacije o stanju skladišta trenutno nisu dostupne.

RSD 12.802

RSD 640,111 komad (isporucivo u Tubi) (bez PDV-a)

RSD 15.363

RSD 768,133 komad (isporucivo u Tubi) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 170 A, 80 V, 3-Pin TO-247AC IRFP2907ZPBF
Odaberite vrstu pakovanja

Proizvodno pakovanje (cev)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 2
20RSD 12.802
22RSD 14.082
24RSD 15.363
26RSD 16.643
28RSD 17.923
30RSD 19.203
32RSD 20.484
34RSD 21.764
36RSD 23.044
38RSD 24.324
40RSD 25.604
42RSD 26.885
44RSD 28.165
46RSD 29.445
48RSD 30.725

RSD 12.802

RSD 640,111 komad (isporucivo u Tubi) (bez PDV-a)

RSD 15.363

RSD 768,133 komad (isporucivo u Tubi) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 170 A, 80 V, 3-Pin TO-247AC IRFP2907ZPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (cev)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 2
20RSD 12.802
22RSD 14.082
24RSD 15.363
26RSD 16.643
28RSD 17.923
30RSD 19.203
32RSD 20.484
34RSD 21.764
36RSD 23.044
38RSD 24.324
40RSD 25.604
42RSD 26.885
44RSD 28.165
46RSD 29.445
48RSD 30.725

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo cev
20 - 48RSD 640,111RSD 1.280
50 - 98RSD 627,048RSD 1.254
100 - 198RSD 600,921RSD 1.202
200+RSD 581,325RSD 1.163

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

80 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

310 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.9mm

Maximum Operating Temperature

+175 °C

Height

20.3mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više