IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.46mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 24,95
€ 24,95 Each (bez PDV-a)
€ 29,19
€ 29,19 Each (s PDV-om)
1
€ 24,95
€ 24,95 Each (bez PDV-a)
€ 29,19
€ 29,19 Each (s PDV-om)
1
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Provjerite ponovno kasnije.
| količina | Jedinična cijena |
|---|---|
| 1 - 4 | € 24,95 |
| 5 - 19 | € 21,78 |
| 20 - 49 | € 21,73 |
| 50+ | € 20,47 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.46mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda