IXYS Linear N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXTN22N100L
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
1000 V
Series
Linear
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
25.07mm
Length
38.2mm
Typical Gate Charge @ Vgs
270 nC @ 15 V
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.6mm
Zemlja podrijetla
United States
Detalji o proizvodu
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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RSD 112.411
RSD 11.241,133 komad (u Tubi od 10) (bez PDV-a)
RSD 134.894
RSD 13.489,36 komad (u Tubi od 10) (s PDV-om)
10
RSD 112.411
RSD 11.241,133 komad (u Tubi od 10) (bez PDV-a)
RSD 134.894
RSD 13.489,36 komad (u Tubi od 10) (s PDV-om)
10
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PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
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- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
1000 V
Series
Linear
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
25.07mm
Length
38.2mm
Typical Gate Charge @ Vgs
270 nC @ 15 V
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.6mm
Zemlja podrijetla
United States
Detalji o proizvodu
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda