Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.35mm
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Dual P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
KM 10,56
KM 0,352 Each (Supplied as a Tape) (bez PDV-a)
KM 12,36
KM 0,412 Each (Supplied as a Tape) (s PDV-om)
Standard
30
KM 10,56
KM 0,352 Each (Supplied as a Tape) (bez PDV-a)
KM 12,36
KM 0,412 Each (Supplied as a Tape) (s PDV-om)
Standard
30
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Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
1.35mm
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu