onsemi PowerTrench Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N

RS kataloški broj:: 809-0852robna marka: onsemiProizvođački broj:: FDC6401N
brand-logo
Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

106 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Length

3mm

Typical Gate Charge @ Vgs

3.3 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
Informacije o stanju skladišta trenutno nisu dostupne.

€ 13,00

€ 0,65 komadno ( isporučuje se kao traka) (bez PDV-a)

€ 15,21

€ 0,76 komadno ( isporučuje se kao traka) (s PDV-om)

onsemi PowerTrench Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N
Odaberite vrstu pakovanja

€ 13,00

€ 0,65 komadno ( isporučuje se kao traka) (bez PDV-a)

€ 15,21

€ 0,76 komadno ( isporučuje se kao traka) (s PDV-om)

onsemi PowerTrench Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 FDC6401N
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

106 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Length

3mm

Typical Gate Charge @ Vgs

3.3 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više