Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
222 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.9mm
Length
10.36mm
Typical Gate Charge @ Vgs
108 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.07mm
Zemlja podrijetla
China
KM 9.466,07
KM 9,466 Each (In a Tube of 1000) (bez PDV-a)
KM 11.075,30
KM 11,075 Each (In a Tube of 1000) (s PDV-om)
1000
KM 9.466,07
KM 9,466 Each (In a Tube of 1000) (bez PDV-a)
KM 11.075,30
KM 11,075 Each (In a Tube of 1000) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
1000
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
222 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.9mm
Length
10.36mm
Typical Gate Charge @ Vgs
108 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.07mm
Zemlja podrijetla
China