Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
12.5 A
Maximum Drain Source Voltage
30 V
Series
PowerTrench
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 5 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Width
4mm
Transistor Material
Si
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
RSD 790
RSD 158,068 komadno (u pakovanju od 5) (bez PDV-a)
RSD 948
RSD 189,682 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 790
RSD 158,068 komadno (u pakovanju od 5) (bez PDV-a)
RSD 948
RSD 189,682 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 20 | RSD 158,068 | RSD 790 |
25 - 95 | RSD 131,941 | RSD 660 |
100 - 245 | RSD 90,138 | RSD 451 |
250+ | RSD 88,832 | RSD 444 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
12.5 A
Maximum Drain Source Voltage
30 V
Series
PowerTrench
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 5 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Width
4mm
Transistor Material
Si
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.