Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Series
NDS352AP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Number of Elements per Chip
1
Width
1.4mm
Length
2.92mm
Minimum Operating Temperature
-55 °C
Height
0.94mm
KM 1.114,81
KM 0,372 Each (On a Reel of 3000) (bez PDV-a)
KM 1.304,33
KM 0,435 Each (On a Reel of 3000) (s PDV-om)
3000
KM 1.114,81
KM 0,372 Each (On a Reel of 3000) (bez PDV-a)
KM 1.304,33
KM 0,435 Each (On a Reel of 3000) (s PDV-om)
3000
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Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Series
NDS352AP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Number of Elements per Chip
1
Width
1.4mm
Length
2.92mm
Minimum Operating Temperature
-55 °C
Height
0.94mm