Tehnička dokumentacija
Tehnički podaci
Brand
Semikron DanfossMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Single
Package Type
SEMITRANS3
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
106.4 x 61.4 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Width
61.4mm
Detalji o proizvodu
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
KM 743,46
KM 743,46 Each (bez PDV-a)
KM 869,85
KM 869,85 Each (s PDV-om)
1
KM 743,46
KM 743,46 Each (bez PDV-a)
KM 869,85
KM 869,85 Each (s PDV-om)
1
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena |
---|---|
1 - 9 | KM 743,46 |
10 - 19 | KM 717,13 |
20 - 49 | KM 709,68 |
50 - 249 | KM 701,66 |
250+ | KM 693,33 |
Tehnička dokumentacija
Tehnički podaci
Brand
Semikron DanfossMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Single
Package Type
SEMITRANS3
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
106.4 x 61.4 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Width
61.4mm
Detalji o proizvodu
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.