Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
9 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1600 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
RSD 483
RSD 483 Each (bez PDV-a)
RSD 580
RSD 580 Each (s PDV-om)
1
RSD 483
RSD 483 Each (bez PDV-a)
RSD 580
RSD 580 Each (s PDV-om)
1
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena |
---|---|
1 - 9 | RSD 483 |
10 - 99 | RSD 414 |
100+ | RSD 336 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
9 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1600 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.