Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
185 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
1.7 nC @ 15 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 58,00
€ 0,29 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 67,86
€ 0,339 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
200
€ 58,00
€ 0,29 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 67,86
€ 0,339 komadno (isporučuje se u namotaju) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
200
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po kolut |
---|---|---|
200 - 480 | € 0,29 | € 5,80 |
500 - 980 | € 0,28 | € 5,60 |
1000 - 1980 | € 0,27 | € 5,40 |
2000+ | € 0,26 | € 5,20 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
185 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
1.7 nC @ 15 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu