Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
545 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
DirectFET
Mounting Type
Surface Mount
Pin Count
15
Maximum Drain Source Resistance
0.0006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Number of Elements per Chip
1
Transistor Material
Silicon
RSD 2.984
RSD 1.491,851 komadno (u pakovanju od 2) (bez PDV-a)
RSD 3.580
RSD 1.790,221 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
RSD 2.984
RSD 1.491,851 komadno (u pakovanju od 2) (bez PDV-a)
RSD 3.580
RSD 1.790,221 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
2 - 8 | RSD 1.491,851 | RSD 2.984 |
10 - 18 | RSD 1.362,522 | RSD 2.725 |
20 - 48 | RSD 1.341,62 | RSD 2.683 |
50 - 98 | RSD 1.297,205 | RSD 2.594 |
100+ | RSD 1.244,951 | RSD 2.490 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
545 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
DirectFET
Mounting Type
Surface Mount
Pin Count
15
Maximum Drain Source Resistance
0.0006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Number of Elements per Chip
1
Transistor Material
Silicon