Infineon HEXFET P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB IRF5210PBF

RS kataloški broj:: 541-1720brend: InfineonProizvođački broj:: IRF5210PBFDistrelec Article No.: 30341280
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.54mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

4.69mm

Minimum Operating Temperature

-55 °C

Height

8.77mm

Forward Diode Voltage

1.6V

Detalji o proizvodu

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 381

RSD 381 Each (bez PDV-a)

RSD 458

RSD 458 Each (s PDV-om)

Infineon HEXFET P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB IRF5210PBF
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1RSD 381
2RSD 763
3RSD 1.144
4RSD 1.526
5RSD 1.907
6RSD 2.289
7RSD 2.670
8RSD 3.052
9RSD 3.433
10RSD 3.684
11RSD 4.052
12RSD 4.421
13RSD 4.789
14RSD 5.157
15RSD 5.526

RSD 381

RSD 381 Each (bez PDV-a)

RSD 458

RSD 458 Each (s PDV-om)

Infineon HEXFET P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB IRF5210PBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1RSD 381
2RSD 763
3RSD 1.144
4RSD 1.526
5RSD 1.907
6RSD 2.289
7RSD 2.670
8RSD 3.052
9RSD 3.433
10RSD 3.684
11RSD 4.052
12RSD 4.421
13RSD 4.789
14RSD 5.157
15RSD 5.526

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cena
1 - 9RSD 381
10+RSD 368

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design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.54mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

4.69mm

Minimum Operating Temperature

-55 °C

Height

8.77mm

Forward Diode Voltage

1.6V

Detalji o proizvodu

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in