Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.51e+007 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
KM 3.618,23
KM 1,447 Each (On a Reel of 2500) (bez PDV-a)
KM 4.233,33
KM 1,693 Each (On a Reel of 2500) (s PDV-om)
2500
KM 3.618,23
KM 1,447 Each (On a Reel of 2500) (bez PDV-a)
KM 4.233,33
KM 1,693 Each (On a Reel of 2500) (s PDV-om)
2500
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Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.51e+007 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si