Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Package Type
PW Mold2
Series
2SK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Height
5.5mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Japan
Detalji o proizvodu
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
KM 16,04
KM 0,802 Each (In a Pack of 20) (bez PDV-a)
KM 18,77
KM 0,938 Each (In a Pack of 20) (s PDV-om)
20
KM 16,04
KM 0,802 Each (In a Pack of 20) (bez PDV-a)
KM 18,77
KM 0,938 Each (In a Pack of 20) (s PDV-om)
20
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
20 - 40 | KM 0,802 | KM 16,04 |
60 - 100 | KM 0,724 | KM 14,47 |
120+ | KM 0,645 | KM 12,91 |
Tehnička dokumentacija
Tehnički podaci
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Package Type
PW Mold2
Series
2SK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Height
5.5mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Japan
Detalji o proizvodu