Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.3mm
Typical Gate Charge @ Vgs
13.7 nC @ 10 V
Width
4.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Detalji o proizvodu
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,606
Each (Supplied on a Reel) (bez PDV-a)
KM 0,709
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
25
KM 0,606
Each (Supplied on a Reel) (bez PDV-a)
KM 0,709
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
25
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.3mm
Typical Gate Charge @ Vgs
13.7 nC @ 10 V
Width
4.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Detalji o proizvodu