Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMounting Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current
11.8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
SiC Schottky
Pin Count
2 + Tab
Maximum Forward Voltage Drop
2.3V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
37A
Zemlja podrijetla
Malaysia
Detalji o proizvodu
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Diodes and Rectifiers, Infineon
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Provjerite ponovno kasnije.
€ 4,95
Each (In a Pack of 2) (bez PDV-a)
€ 5,792
Each (In a Pack of 2) (s PDV-om)
Standard
2
€ 4,95
Each (In a Pack of 2) (bez PDV-a)
€ 5,792
Each (In a Pack of 2) (s PDV-om)
Standard
2
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
2 - 18 | € 4,95 | € 9,90 |
20 - 48 | € 4,40 | € 8,80 |
50 - 98 | € 4,25 | € 8,50 |
100 - 198 | € 4,15 | € 8,30 |
200+ | € 3,95 | € 7,90 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMounting Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current
11.8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
SiC Schottky
Pin Count
2 + Tab
Maximum Forward Voltage Drop
2.3V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
37A
Zemlja podrijetla
Malaysia
Detalji o proizvodu
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.