Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Number of Elements per Chip
1
Transistor Material
Si
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 2,617
Each (On a Reel of 4800) (bez PDV-a)
KM 3,062
Each (On a Reel of 4800) (s PDV-om)
4800
KM 2,617
Each (On a Reel of 4800) (bez PDV-a)
KM 3,062
Each (On a Reel of 4800) (s PDV-om)
4800
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Number of Elements per Chip
1
Transistor Material
Si