Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
120 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-204
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
200
Maximum Base Emitter Saturation Voltage
5 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
4 V
Height
8.51mm
Width
26.67mm
Minimum Operating Temperature
-55 °C
Dimensions
39.37 x 26.67 x 8.51mm
Maximum Operating Temperature
+200 °C
Length
39.37mm
Zemlja podrijetla
Czech Republic
Detalji o proizvodu
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
100
P.O.A.
100
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
120 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-204
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
200
Maximum Base Emitter Saturation Voltage
5 V
Maximum Collector Base Voltage
120 V
Maximum Collector Emitter Saturation Voltage
4 V
Height
8.51mm
Width
26.67mm
Minimum Operating Temperature
-55 °C
Dimensions
39.37 x 26.67 x 8.51mm
Maximum Operating Temperature
+200 °C
Length
39.37mm
Zemlja podrijetla
Czech Republic
Detalji o proizvodu
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.