Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.05 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalji o proizvodu
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 5,624
Each (In a Pack of 2) (bez PDV-a)
KM 6,58
Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 5,624
Each (In a Pack of 2) (bez PDV-a)
KM 6,58
Each (In a Pack of 2) (s PDV-om)
Standard
2
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
2 - 18 | KM 5,624 | KM 11,25 |
20 - 98 | KM 4,867 | KM 9,73 |
100 - 198 | KM 4,434 | KM 8,87 |
200 - 498 | KM 3,763 | KM 7,53 |
500+ | KM 3,612 | KM 7,22 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.05 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalji o proizvodu