Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Series
SQ Rugged
Minimum Operating Temperature
-55 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 101,895
komadno (u pakovanju od 20) (bez PDV-a)
RSD 122,274
komadno (u pakovanju od 20) (s PDV-om)
20
RSD 101,895
komadno (u pakovanju od 20) (bez PDV-a)
RSD 122,274
komadno (u pakovanju od 20) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
20 - 180 | RSD 101,895 | RSD 2.038 |
200 - 480 | RSD 82,30 | RSD 1.646 |
500 - 980 | RSD 69,236 | RSD 1.385 |
1000 - 1980 | RSD 56,173 | RSD 1.123 |
2000+ | RSD 47,029 | RSD 941 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Series
SQ Rugged
Minimum Operating Temperature
-55 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu