Tehnička dokumentacija
Tehnički podaci
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Mounting Type
Through Hole
Brand
WinslowZemlja podrijetla
United Kingdom
Detalji o proizvodu
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 24,333
komadno (u pakovanju od 5) (bez PDV-a)
KM 28,47
komadno (u pakovanju od 5) (s PDV-om)
5
KM 24,333
komadno (u pakovanju od 5) (bez PDV-a)
KM 28,47
komadno (u pakovanju od 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 120 | KM 24,333 | KM 121,66 |
125 - 370 | KM 22,17 | KM 110,85 |
375 - 995 | KM 20,331 | KM 101,66 |
1000 - 1995 | KM 18,601 | KM 93,00 |
2000+ | KM 17,952 | KM 89,76 |
Tehnička dokumentacija
Tehnički podaci
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Mounting Type
Through Hole
Brand
WinslowZemlja podrijetla
United Kingdom
Detalji o proizvodu
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.