Infineon 64kbit SPI FRAM Memory 8-Pin TDFN, FM25CL64B-DG
Tehnička dokumentacija
Tehnički podaci
Memory Size
64kbit
Organisation
8192 x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Mounting Type
Surface Mount
Package Type
TDFN
Pin Count
8
Dimensions
4.5 x 4 x 0.75mm
Length
4.5mm
Maximum Operating Supply Voltage
3.65 V
Width
4mm
Height
0.75mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Minimum Operating Supply Voltage
2.7 V
Number of Words
8192
Minimum Operating Temperature
-40 °C
Detalji o proizvodu
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Cijena na upit
1
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Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Memory Size
64kbit
Organisation
8192 x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Mounting Type
Surface Mount
Package Type
TDFN
Pin Count
8
Dimensions
4.5 x 4 x 0.75mm
Length
4.5mm
Maximum Operating Supply Voltage
3.65 V
Width
4mm
Height
0.75mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Minimum Operating Supply Voltage
2.7 V
Number of Words
8192
Minimum Operating Temperature
-40 °C
Detalji o proizvodu
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda