Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF

RS kataloški broj:: 907-5028robna marka: InfineonProizvođački broj:: IRF540NLPBF
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

44 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

71 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.65mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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KM 38,92

KM 3,892 Each (In a Pack of 10) (bez PDV-a)

KM 45,54

KM 4,554 Each (In a Pack of 10) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10KM 38,92
20KM 77,84
30KM 116,76
40KM 155,68
50KM 194,60
60KM 233,52
70KM 272,44
80KM 311,36
90KM 350,28
100KM 373,56
110KM 410,91
120KM 448,27
130KM 485,63
140KM 522,98
150KM 560,34

KM 38,92

KM 3,892 Each (In a Pack of 10) (bez PDV-a)

KM 45,54

KM 4,554 Each (In a Pack of 10) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10KM 38,92
20KM 77,84
30KM 116,76
40KM 155,68
50KM 194,60
60KM 233,52
70KM 272,44
80KM 311,36
90KM 350,28
100KM 373,56
110KM 410,91
120KM 448,27
130KM 485,63
140KM 522,98
150KM 560,34

Informacije o stanju skladišta trenutno nisu dostupne.

količinaJedinična cijenaPo pakovanje
10 - 90KM 3,892KM 38,92
100 - 490KM 3,736KM 37,36
500 - 990KM 3,716KM 37,16
1000+KM 3,599KM 35,99

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design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

44 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

71 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.65mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više