Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.67mm
Length
10.36mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
15.21mm
Zemlja podrijetla
China
€ 3.672,00
€ 4,59 Each (In a Tube of 800) (bez PDV-a)
€ 4.296,24
€ 5,37 Each (In a Tube of 800) (s PDV-om)
800
€ 3.672,00
€ 4,59 Each (In a Tube of 800) (bez PDV-a)
€ 4.296,24
€ 5,37 Each (In a Tube of 800) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
800
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.67mm
Length
10.36mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
15.21mm
Zemlja podrijetla
China