Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
RSD 1.110
RSD 44,416 komadno (u pakovanju od 25) (bez PDV-a)
RSD 1.332
RSD 53,299 komadno (u pakovanju od 25) (s PDV-om)
Standard
25
RSD 1.110
RSD 44,416 komadno (u pakovanju od 25) (bez PDV-a)
RSD 1.332
RSD 53,299 komadno (u pakovanju od 25) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cena | Po pakovanje |
---|---|---|
25 - 75 | RSD 44,416 | RSD 1.110 |
100 - 225 | RSD 39,19 | RSD 980 |
250 - 475 | RSD 35,271 | RSD 882 |
500 - 975 | RSD 32,659 | RSD 816 |
1000+ | RSD 30,046 | RSD 751 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu