Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
11.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
KM 11,93
KM 1,193 Each (In a Pack of 10) (bez PDV-a)
KM 13,96
KM 1,396 Each (In a Pack of 10) (s PDV-om)
Standard
10
KM 11,93
KM 1,193 Each (In a Pack of 10) (bez PDV-a)
KM 13,96
KM 1,396 Each (In a Pack of 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
11.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu