Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
RSD 13.782
RSD 275,64 komad (u Tubi od 50) (bez PDV-a)
RSD 16.538
RSD 330,768 komad (u Tubi od 50) (s PDV-om)
50
RSD 13.782
RSD 275,64 komad (u Tubi od 50) (bez PDV-a)
RSD 16.538
RSD 330,768 komad (u Tubi od 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cena | Po cev |
---|---|---|
50 - 50 | RSD 275,64 | RSD 13.782 |
100 - 450 | RSD 219,467 | RSD 10.973 |
500 - 950 | RSD 190,727 | RSD 9.536 |
1000 - 4950 | RSD 167,213 | RSD 8.361 |
5000+ | RSD 163,294 | RSD 8.165 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu