N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 Fairchild BS170_D26Z

RS kataloški broj:: 761-3596robna marka: Fairchild SemiconductorProizvođački broj:: BS170_D26Z
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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.2mm

Width

4.19mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

PRICED TO CLEAR

Yes

Height

5.33mm

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 Fairchild BS170_D26Z
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P.O.A.

N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 Fairchild BS170_D26Z
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.2mm

Width

4.19mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

PRICED TO CLEAR

Yes

Height

5.33mm

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više