N-Channel MOSFET, 88 A, 100 V, 3-Pin TO-220AB Infineon AUIRFB4410
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
88 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
120 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Height
16.51mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Mexico
Detalji o proizvodu
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
88 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
120 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Height
16.51mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Mexico
Detalji o proizvodu
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda