N-Channel MOSFET, 45 A, 150 V, 7-Pin WDSON Infineon BSB165N15NZ3GXUMA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
150 V
Package Type
WDSON
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
17.9 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Height
0.53mm
Series
OptiMOS
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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P.O.A.
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P.O.A.
5000
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PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
150 V
Package Type
WDSON
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
17.9 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Height
0.53mm
Series
OptiMOS
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda