Infineon 1200V 15A, SiC Schottky Diode, 2-Pin TO-220 IDH15S120

RS kataloški broj:: 911-0982robna marka: InfineonProizvođački broj:: IDH15S120
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Tehnička dokumentacija

Tehnički podaci

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

15A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Rectifier Type

High Voltage

Diode Type

SiC Schottky

Pin Count

2

Maximum Forward Voltage Drop

2.55V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

78A

Zemlja podrijetla

Singapore

Detalji o proizvodu

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Diodes and Rectifiers, Infineon

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P.O.A.

Infineon 1200V 15A, SiC Schottky Diode, 2-Pin TO-220 IDH15S120

P.O.A.

Infineon 1200V 15A, SiC Schottky Diode, 2-Pin TO-220 IDH15S120
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

15A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Rectifier Type

High Voltage

Diode Type

SiC Schottky

Pin Count

2

Maximum Forward Voltage Drop

2.55V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

78A

Zemlja podrijetla

Singapore

Detalji o proizvodu

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Diodes and Rectifiers, Infineon

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više