Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 5
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 709,348
komadno (u pakovanju od 5) (bez PDV-a)
RSD 851,218
komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 709,348
komadno (u pakovanju od 5) (bez PDV-a)
RSD 851,218
komadno (u pakovanju od 5) (s PDV-om)
Standard
5
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 5
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V