N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK Infineon IPB60R099C6ATMA1

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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.31mm

Typical Gate Charge @ Vgs

119 nC @ 10 V

Height

9.45mm

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Detalji o proizvodu

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK Infineon IPB60R099C6ATMA1

P.O.A.

N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK Infineon IPB60R099C6ATMA1
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.31mm

Typical Gate Charge @ Vgs

119 nC @ 10 V

Height

9.45mm

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Detalji o proizvodu

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više