N-Channel MOSFET, 24 A, 700 V, 3-Pin TO-247 Infineon IPW65R095C7XKSA1

RS kataloški broj:: 897-7636Probna marka: InfineonProizvođački broj:: IPW65R095C7XKSA1
brand-logo
Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

21.1mm

Series

CoolMOS C7

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

5.21mm

Detalji o proizvodu

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

P.O.A.

N-Channel MOSFET, 24 A, 700 V, 3-Pin TO-247 Infineon IPW65R095C7XKSA1
Odaberite vrstu pakovanja

P.O.A.

N-Channel MOSFET, 24 A, 700 V, 3-Pin TO-247 Infineon IPW65R095C7XKSA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Width

21.1mm

Series

CoolMOS C7

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

5.21mm

Detalji o proizvodu

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više