N-Channel MOSFET, 17 A, 100 V, 3-Pin D2PAK Infineon IRF530NSTRLPBF

RS kataloški broj:: 831-2837brend: InfineonProizvođački broj:: IRF530NSTRLPBFDistrelec Article No.: 30284013
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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.83mm

Zemlja podrijetla

China

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 3.684

RSD 184,195 komadno (u pakovanju od 20) (bez PDV-a)

RSD 4.421

RSD 221,034 komadno (u pakovanju od 20) (s PDV-om)

N-Channel MOSFET, 17 A, 100 V, 3-Pin D2PAK Infineon IRF530NSTRLPBF
Odaberite vrstu pakovanja

RSD 3.684

RSD 184,195 komadno (u pakovanju od 20) (bez PDV-a)

RSD 4.421

RSD 221,034 komadno (u pakovanju od 20) (s PDV-om)

N-Channel MOSFET, 17 A, 100 V, 3-Pin D2PAK Infineon IRF530NSTRLPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo pakovanje
20 - 80RSD 184,195RSD 3.684
100 - 180RSD 143,698RSD 2.874
200 - 480RSD 139,779RSD 2.796
500 - 980RSD 137,167RSD 2.743
1000+RSD 130,635RSD 2.613

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  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
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Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.83mm

Zemlja podrijetla

China

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više