P-Channel MOSFET, 6 A, 30 V, 7-Pin DFN2020 Infineon IRFHS9301TRPBF

RS kataloški broj:: 737-7310robna marka: InfineonProizvođački broj:: IRFHS9301TRPBF
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

DFN2020

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.1mm

Width

2.1mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

0.95mm

Detalji o proizvodu

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0,41

Each (In a Pack of 10) (bez PDV-a)

€ 0,48

Each (In a Pack of 10) (s PDV-om)

P-Channel MOSFET, 6 A, 30 V, 7-Pin DFN2020 Infineon IRFHS9301TRPBF
Odaberite vrstu pakovanja

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10€ 4,10
20€ 8,20
30€ 12,30
40€ 16,40
50€ 20,50
60€ 24,60
70€ 28,70
80€ 32,80
90€ 36,90
100€ 41,00
110€ 45,10
120€ 49,20
130€ 53,30
140€ 57,40
150€ 61,50

€ 0,41

Each (In a Pack of 10) (bez PDV-a)

€ 0,48

Each (In a Pack of 10) (s PDV-om)

P-Channel MOSFET, 6 A, 30 V, 7-Pin DFN2020 Infineon IRFHS9301TRPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10€ 4,10
20€ 8,20
30€ 12,30
40€ 16,40
50€ 20,50
60€ 24,60
70€ 28,70
80€ 32,80
90€ 36,90
100€ 41,00
110€ 45,10
120€ 49,20
130€ 53,30
140€ 57,40
150€ 61,50

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

DFN2020

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.1mm

Width

2.1mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

0.95mm

Detalji o proizvodu

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više