Infineon N-Channel MOSFET, 53 A, 55 V, 3-Pin TO-220AB IRFZ46NPBF

RS kataloški broj:: 541-0711robna marka: InfineonProizvođački broj:: IRFZ46NPBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

72 nC @ 10 V

Width

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Maximum Operating Temperature

+175 °C

Height

9.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Detalji o proizvodu

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 2,46

KM 2,46 Each (bez PDV-a)

KM 2,88

KM 2,88 Each (s PDV-om)

Infineon N-Channel MOSFET, 53 A, 55 V, 3-Pin TO-220AB IRFZ46NPBF
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1KM 2,46
2KM 4,93
3KM 7,39
4KM 9,86
5KM 12,32
6KM 14,79
7KM 17,25
8KM 19,71
9KM 22,18
10KM 24,64
11KM 27,11
12KM 29,57
13KM 32,04
14KM 34,50
15KM 36,96

KM 2,46

KM 2,46 Each (bez PDV-a)

KM 2,88

KM 2,88 Each (s PDV-om)

Infineon N-Channel MOSFET, 53 A, 55 V, 3-Pin TO-220AB IRFZ46NPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1KM 2,46
2KM 4,93
3KM 7,39
4KM 9,86
5KM 12,32
6KM 14,79
7KM 17,25
8KM 19,71
9KM 22,18
10KM 24,64
11KM 27,11
12KM 29,57
13KM 32,04
14KM 34,50
15KM 36,96

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

količinaJedinična cijena
1 - 24KM 2,46
25 - 49KM 2,25
50 - 99KM 2,21
100 - 249KM 2,11
250+KM 2,03

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PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

72 nC @ 10 V

Width

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Maximum Operating Temperature

+175 °C

Height

9.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Detalji o proizvodu

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in